| PART |
Description |
Maker |
| UPA1730G-E1 UPA1730TP-E2 UPA1730TP-E1 UPA1730G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| UPA1819GR-9JG-E1 UPA1819GR-9JG-E2 |
Pch enhancement MOS FET
|
NEC
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
| UPA1970TE UPA1970TE-T2 |
Nch enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1763G-E1 UPA1763G-E2 |
N-channel enhancement type power MOS FET(Dual type)
|
NEC
|
| UPA1792G-E1 UPA1792G-E2 |
N-ch P-ch enhancement type power MOS FET
|
NEC
|
| UPA1726G-E2 UPA1726G-E1 |
N-channel enhancement type power MOS FET
|
NEC
|
| UPA1720G-E1 UPA1720G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
| UPA1723G-E1 UPA1723G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
